^zmi-conductoi lpioaucti, dnc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BUZ24 general description n-channol enhancement mode field-effect power transistor in a metal envelope. this device is intended for use in switched mode power supplies (smps), motor control, welding, dc/dc and dc/ac converters, and in general purpose switching applications. quick reference data symbol vds id ptot rdscon) parameter drain-source voltage drain current (d.c.) total power dissipation drain-source on-state resistance max. 100 32 125 0,06 unit v a w n mechanical data dimensions in mm net mass: 12 g pinning: 1 = gate 2 = drain 3 = source 25,4- *8,3? 38,66. 30,1 19.s 1,6-*- u-11,8-.- "mho 1,55 max fig.i t03; drain connected to mounting base. notes 1. observe the general handling precautions for electrostatic-discharge sensitive devices (esds) to prevent damage to mos gate oxide. 2. accessories supplied on request: refer to mounting instructions for to3 envelopes. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
ratings limiting values in accordance with the absolute maximum system (iec134) symbol vds vdgr vgs id id idm ptot tstg tj parameter drain-source voltage drain-gate voltage gate-source voltage drain-current (d.c.) drain current (d.c.) drain current (pulse peak value) total power dissipation storage temperature junction temperature conditions - rgs - 20 kn - tmb = 25 c tmb-loo-c .tmb = 25 "c tmb = 25 "c - ? min. - ? ? - - - - - -55 ? max. 100 100 20 32 20,2 125 125 150 150 unit v v . v a a a w "c "c thermal resistances prom junction to mounting base from junction to ambient rthj-mb - 1,0 k/w rthj-a = 35 k/w static characteristics tmb = 25 c unless otherwise specified symbol v(br)dss vcs(to) idss idss igss rds(on) parameter drain-source breakdown voltage gate threshold voltage zero gate voltage drain current zero gate voltage drain current gate source leakage current drain-source on-state resistance conditions vgs = 0 v; 10 = 0,25 ma vds = vgs; id = ima vds=100v;vgs = ov;tj = 25ec vds=100v;vgs = ov;tj-125c vgsi!*20v;vds = ov vgs=10v;id = 16a min. 100 2,1 typ. 3,0 20 0,1 10 0,045 max. 4.0 250 1,0 100 0,06 unit v v m ma na ? dynamic characteristics tmb = 25 "c unless otherwise specified symbol bfs clss goss crss *don tr tdoff tf ld ls parameter forward transconductance input capacitance output capacitance feedback capacitance turn-on delay time turn-on rise time turn-off delay time turn-off fall time internal drain inductance internal source inductance conditions vds = 25v;id=16a vqs = v: vds = 25 v; f = i mhz vdd = 30v;id = 3a; vgs = 10 v; rgs = 50 n; rgen = 50 o measured from contact screw on header closer to source pin and centre of die measured from source lead 6 mm from package to source bond pad min. 6,0 - - - typ. 10,0 1500 800 300 30 80 330 170 5,0 n,s max. - 2000 1200 500 45 120 430 220 - unit s pf pf pf ns ns ns ns nh nh
reverse diode ratings and characteristics tmo ? 25 c unless otherwise specified symbol idr idrm vsd ttr qrr parameter continuous reverse drain current pulsed reverse drain current diode forward on-voltage reverse recovery time reverse recovery charge conditions tmb-25'c tmb = 25"c if = 64a;vcsov; tj = 25c lf = 32a;tj = 25''c -dlf/dt= 100 a/ms;'' tj-250c;vgs='ov; vr = 30 v min. - typ. 1,5 200 1,6 max. 32 125 2.0 unit a a v ns mc
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